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AE 3156310-015 半导体射频发生器

发布时间:2026-09-01人气:
  • AE 3156310-015 半导体射频发生器
  • AE 3156310-015 半导体射频发生器
  • AE 3156310-015 半导体射频发生器

AE 3156310-015 半导体射频发生器 

1.产 品 资 料 介 绍:

AE 3156310‑015 是半导体固态射频发生器,为等离子体工艺提供射频功率输出,适配刻蚀、薄膜沉积设备。
产品特点:
1. 固态功率放大,输出功率稳定,工艺一致性好
2. 负载自适应,适配等离子体动态阻抗变化
3. 驻波、过温、过流多重保护,故障报警输出
4. 模拟数字双通讯,支持机台远程程控控制
5. 机架式紧凑结构,拆装维护简单
产品参数:
1. 输出频率:13.56MHz
2. 额定输出功率:1500W
3. 输出阻抗:50Ω
4. 冷却方式:风冷
5. 通讯接口:模拟 I/O、RS‑232
应用领域:
1. 半导体刻蚀设备等离子体供电
2.PECVD 薄膜沉积射频驱动
3. 真空 PVD 工艺功率供给
4.MEMS 等离子体加工设备
5. 半导体工艺设备备件替换
AE 3156310‑015 可为半导体等离子体制程输出稳定可靠的射频功率。

AE 3156310-015 半导体射频发生器 产品英文介绍

AE 3156310-015 is a semiconductor solid-state RF generator that provides RF power output for plasma processes and is compatible with etching and thin film deposition equipment.

Product Features:

1. Solid state power amplification, stable output power, and good process consistency

2. Load adaptive, adapted to plasma dynamic impedance changes

3. Multiple protection against standing waves, overheating, and overcurrent, with fault alarm output

4. Analog digital dual communication, supporting remote program control of the machine

5. Rack mounted compact structure, easy disassembly and maintenance

Product Parameters:

1. Output frequency: 13.56MHz

2. Rated output power: 1500W

3. Output impedance: 50 Ω

4. Cooling method: air cooling

5. Communication interface: Analog I/O, RS-232

Application fields:

1. Plasma power supply for semiconductor etching equipment

2. PECVD thin film deposition RF drive

3. Power supply for vacuum PVD process

4. MEMS plasma processing equipment

5. Replacement of spare parts for semiconductor process equipment

AE 3156310-015 can provide stable and reliable RF power output for semiconductor plasma processes.

AE 3156310-015 半导体射频发生器 产品展示

3156310-015.webp.jpg

视频展示


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The content is from Ruichang Mingsheng Automation Equipment Co., LTD

Contact: +86 15270269218 

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