1.产 品 资 料 介 绍：
ENI GHW12Z-13DF2N0-001 射频发生器，GHW 系列 13.56MHz 固态射频电源，适配 AMAT 半导体机台等离子工艺。 产品特点：
- 超快失配保护响应，负载反射功率突增时快速限制输出，保护腔体与靶材
- 功率调节精度高，等离子体状态稳定，保证薄膜工艺重复性
- 低杂散射频输出，减少对机台周边传感器信号干扰
- 19 英寸标准机架结构，方便机柜集成安装与拆装检修
- 完善内部自检，开机自动诊断，缩短故障排查时间 产品参数：
- 型号：GHW12Z-13DF2N0-001
- 工作频率：13.56MHz
- 额定输出功率：1250W
- 通讯接口：RS232 串口
- 射频接口：N 型射频接头 应用领域：
- PECVD 等离子增强化学气相沉积供电
- HDPCVD 高密度等离子体薄膜工艺
- 半导体介质层刻蚀设备射频源
- 平板显示薄膜制备工艺
- AMAT 机台 GHW 系列射频电源备件更换 等离子薄膜设备备件更换，ENI GHW12Z-13DF2N0-001 射频发生器可以直接匹配原有设备回路。
ENI GHW12Z-13DF2N0-001射频发生器 产品英文介绍
ENI GHW12Z-13DF2N0-001 RF generator, GHW series 13.56MHz solid-state RF power supply, compatible with AMAT semiconductor machine plasma process.
Product Features:
1. Ultra fast mismatch protection response, quickly limiting output when load reflection power suddenly increases, protecting the cavity and target material
2. High precision power regulation, stable plasma state, ensuring repeatability of thin film process
3. Low stray RF output, reducing interference with sensor signals around the machine
4. 19 inch standard rack structure, convenient for integrated installation, disassembly and maintenance of cabinets
5. Improve internal self inspection, automatic diagnosis upon startup, and shorten troubleshooting time
Product Parameters:
6. Model: GHW12Z-13DF2N0-001
7. Operating frequency: 13.56MHz
8. Rated output power: 1250W
9. Communication interface: RS232 serial port
10. RF interface: N-type RF connector
Application fields:
11. PECVD plasma enhanced chemical vapor deposition power supply
12. HDPCVD high-density plasma thin film process
13. Semiconductor dielectric layer etching equipment RF source
14. Preparation process of flat panel display film
15. Replacement of spare parts for AMAT GHW series RF power supply
Replacement of spare parts for plasma thin film equipment, ENI GHW12Z-13DF2N0-001 RF generator can be directly matched with the original equipment circuit.
ENI GHW12Z-13DF2N0-001射频发生器 产品展示
视频展示
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The content is from Ruichang Mingsheng Automation Equipment Co., LTD
Contact: +86 15270269218
