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AMAT Applied Materials 0190-24680 面板温度控制器

发布时间:2025-10-09人气:
  • AMAT Applied Materials 0190-24680 面板温度控制器
  • AMAT Applied Materials 0190-24680 面板温度控制器
  • AMAT Applied Materials 0190-24680 面板温度控制器

AMAT Applied Materials 0190-24680 面板温度控制器

1.产 品 资 料 介 绍:

AMAT Applied Materials 0190-24680 凭借其高精度、高稳定性的温度控制能力,广泛应用于半导体制造及相关领域的多个关键环节,具体应用场景与功能作用如下:
1. 半导体制造设备
在各类半导体制造设备中,该控制器是温度控制的核心执行部件。其主要用途是精准控制工艺腔、气体管路、基片载台及加热板的温度。在工艺腔控制中,通过稳定腔体内温度,确保晶圆在沉积、刻蚀等过程中受热均匀,避免因温度差异导致的晶圆表面工艺效果不一致;在气体管路温度控制上,可防止气体在传输过程中因温度变化发生冷凝或性质改变,保障气体输送的稳定性;对于基片载台和加热板,精准的温度控制能为基片提供均匀的加热环境,直接影响基片与工艺材料的反应效果,进而保障半导体器件的性能与质量。
2. 化学气相沉积(CVD)系统
在 CVD 系统中,反应腔温度是影响薄膜生长的关键因素,0190-24680 通过调节反应腔温度,实现对薄膜生长速率、成分均匀性及应力特性的精准控制。当需要提高薄膜生长速率时,可在工艺允许范围内适当提升反应腔温度,加速化学反应进程;若追求更高的成分均匀性,则需将温度控制在极小的波动范围内,确保反应在稳定的环境中进行;同时,合理的温度调节还能有效控制薄膜内部应力,减少薄膜开裂、脱落等问题,提升薄膜质量与器件可靠性。
3. 物理气相沉积(PVD)系统
在 PVD 系统中,0190-24680 主要用于控制溅射源、基板加热台及挡板加热器的温度。对于溅射源,稳定的温度能保证溅射过程中靶材的蒸发速率均匀,避免因温度波动导致的薄膜厚度不均;基板加热台的温度控制则直接影响薄膜与基板的附着力,通过精准调节温度,可优化薄膜的晶化质量,提升薄膜的物理性能;挡板加热器的温度控制能防止挡板表面因温度过低而出现沉积材料附着,保障挡板的正常开关功能,避免对溅射工艺造成干扰。
4. 刻蚀设备(Etch System)
刻蚀过程中,腔体壁温和电极温度的稳定对刻蚀效果至关重要。0190-24680 通过管理腔体壁温,可防止腔体内壁因温度过高或过低而出现材料沉积或损坏,同时维持腔体内气体化学反应平衡,确保刻蚀速率与刻蚀图形的精度;在电极温度控制方面,稳定的电极温度能保证离子能量分布均匀,避免因电极温度波动导致的刻蚀不均匀、刻蚀深度偏差等问题,提升刻蚀工艺的稳定性与一致性。

AMAT Applied Materials 0190-24680 面板温度控制器 英文资料:

AMAT Applied Materials 0190-24680, with its high-precision and high stability temperature control capabilities, is widely used in multiple key areas of semiconductor manufacturing and related fields. The specific application scenarios and functional roles are as follows:

1. Semiconductor manufacturing equipment

In various semiconductor manufacturing equipment, this controller is the core executing component for temperature control. Its main purpose is to accurately control the temperature of process chambers, gas pipelines, substrate stages, and heating plates. In process chamber control, stabilizing the temperature inside the chamber ensures that the wafer is uniformly heated during deposition, etching, and other processes, avoiding inconsistent surface process effects caused by temperature differences; In gas pipeline temperature control, it can prevent gas from condensing or changing its properties due to temperature changes during transmission, ensuring the stability of gas transportation; For substrate stages and heating plates, precise temperature control can provide a uniform heating environment for the substrate, directly affecting the reaction effect between the substrate and process materials, thereby ensuring the performance and quality of semiconductor devices.

2. Chemical vapor deposition (CVD) system

In CVD systems, the reaction chamber temperature is a key factor affecting film growth. By adjusting the reaction chamber temperature, 0190-24680 achieves precise control over film growth rate, composition uniformity, and stress characteristics. When it is necessary to increase the growth rate of thin films, the reaction chamber temperature can be appropriately raised within the allowable range of the process to accelerate the chemical reaction process; If pursuing higher uniformity of components, it is necessary to control the temperature within a very small fluctuation range to ensure that the reaction proceeds in a stable environment; Meanwhile, reasonable temperature regulation can effectively control the internal stress of the film, reduce problems such as film cracking and detachment, and improve the quality of the film and the reliability of the device.

3. Physical Vapor Deposition (PVD) System

In PVD systems, 0190-24680 is mainly used to control the temperature of sputtering sources, substrate heating stages, and baffle heaters. For sputtering sources, a stable temperature can ensure uniform evaporation rate of the target material during the sputtering process, avoiding uneven film thickness caused by temperature fluctuations; The temperature control of the substrate heating table directly affects the adhesion between the film and the substrate. By accurately adjusting the temperature, the crystallization quality of the film can be optimized and the physical properties of the film can be improved; The temperature control of the baffle heater can prevent the deposition of materials on the baffle surface due to low temperature, ensure the normal switching function of the baffle, and avoid interference with the sputtering process.

4. Etch System

The stability of the cavity wall temperature and electrode temperature is crucial for the etching effect during the etching process. By managing the temperature of the cavity wall, 0190-24680 can prevent material deposition or damage to the cavity wall due to high or low temperature, while maintaining the balance of gas chemical reactions inside the cavity, ensuring the accuracy of etching rate and etching pattern; In terms of electrode temperature control, stable electrode temperature can ensure uniform distribution of ion energy, avoid problems such as uneven etching and etching depth deviation caused by electrode temperature fluctuations, and improve the stability and consistency of the etching process.

 AMAT Applied Materials  0190-24680 面板温度控制器 产品展示      

amat_centura_ap_gas_panel_temperature_controller_p_n_0190-24680_1.jpg

 产品视频

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BENTLY 3500/05-02-04-00-00-00 Monitor framework
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The content is from Ruichang Mingsheng Automation Equipment Co., LTD

Contact: +86 15270269218 

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