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AE A3L5080BA140D211A射频发生器

发布时间:2026-09-16人气:
  • AE A3L5080BA140D211A射频发生器
  • AE A3L5080BA140D211A射频发生器
  • AE A3L5080BA140D211A射频发生器

AE A3L5080BA140D211A射频发生器  

1.产 品 资 料 介 绍:

AE A3L5080BA140D211A 射频发生器是半导体设备里常用的射频电源,等离子工艺输出稳定。
产品特点
功率输出平稳,保证每批次工艺一致性。
内置电弧保护,腔体打火时快速切断功率。
负载适应性强,应对腔体状态波动。
机架式安装,现场备件替换简单。
自带状态反馈,方便故障快速排查。
产品参数
型号 A3L5080BA140D211A 射频发生器。
适配半导体等离子工艺腔体。
标准 13.56MHz 射频工作频率。
内置功率采样与反射监测。
支持机台通讯读取运行数据。
应用领域
半导体刻蚀腔体等离子激发。
PVD 薄膜沉积射频供电。
旧款半导体机台电源备件更换。
腔体等离子清洁设备配套。
真空等离子表面处理设备。
这款射频发生器搭配射频匹配器一起使用,是晶圆工艺设备里很核心的供电备件。

AE A3L5080BA140D211A射频发生器   产品英文介绍

The AE A3L5080BA140D211A RF generator is a commonly used RF power supply in semiconductor equipment, with stable plasma process output.

Product Features

Stable power output ensures consistency in each batch of processes.

Built in arc protection, quickly cuts off power when the chamber ignites.

Strong load adaptability to cope with fluctuations in cavity state.

Rack mounted installation, easy replacement of spare parts on site.

Comes with status feedback for quick troubleshooting.

Product Specifications

Model A3L5080BA140D211A RF generator.

Suitable for semiconductor plasma process chambers.

Standard 13.56MHz RF operating frequency.

Built in power sampling and reflection monitoring.

Support machine communication to read operational data.

Application Areas

Plasma excitation in semiconductor etching chamber.

PVD thin film deposition with RF power supply.

Replacement of power supply spare parts for old semiconductor machines.

Supporting equipment for cavity plasma cleaning.

Vacuum plasma surface treatment equipment.

This RF generator, when used in conjunction with an RF matching device, is a crucial power supply spare part in wafer processing equipment.

AE A3L5080BA140D211A射频发生器   产品展示

A3L5080BA140D211A.webp.jpg

视频展示


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英文产品

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The content is from Ruichang Mingsheng Automation Equipment Co., LTD

Contact: +86 15270269218 

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