AMAT Applied Materials 0041-78374射频匹配组件
1.产 品 资 料 介 绍：
- 高精度等离子体刻蚀：适配硅片、化合物半导体（如 GaN、SiC）的精细刻蚀工艺，通过稳定射频能量传输，保障刻蚀图形的线宽精度（CD）与侧壁垂直度，减少工艺偏差。
- 先进薄膜沉积：用于等离子体增强化学气相沉积（PECVD）、物理气相沉积（PVD）工艺，控制沉积过程中等离子体密度稳定性，提升薄膜的均匀性、致密度及与衬底的结合力。
- 晶圆表面处理：在晶圆键合前的等离子体清洗工艺中，提供稳定射频能量，确保清洗效果一致性，减少表面杂质对键合质量的影响。
AMAT Applied Materials 0041-78374射频匹配组件 英文资料：
1、 Product core positioning
AMAT 0041-78374 RF matching component is a high-precision RF power regulation unit specially developed by Applied Materials for semiconductor plasma process equipment. It belongs to the "core adaptation center" of RF power transmission systems. Its core function is to compensate for impedance mismatch between RF power supply and plasma load in real time. By dynamically adjusting internal adjustable capacitors, inductors and other components, the reflected power is controlled at an extremely low level, ensuring efficient and stable transmission of RF energy to the etching or deposition reaction chamber. It is a key component to ensure plasma density uniformity, process stability and equipment safety in semiconductor processes (such as 14nm and below processes).
Compared to ordinary RF matching devices, this component adopts a modular integrated design that integrates high-precision impedance detection circuits and high-speed response adjustment algorithms. It can quickly respond to severe fluctuations in plasma loads (such as ignition and process parameter switching stages), and has stronger resistance to electromagnetic interference and corrosion in the process environment. It is suitable for Class 100 cleanliness in semiconductor cleanrooms and long-term continuous production needs.
2、 Core structure and technical parameters (derived based on industry standards and similar products)
Based on the AMAT RF system technical specifications, the requirements for RF matching in semiconductor plasma processes, and the application scenarios of this component, the core specifications are speculated as follows:
Parameter category
Specification Description
RF core characteristics
Operating frequency 13.56MHz ± 10ppm (mainstream frequency band in semiconductor technology), suitable power range 100-2000W, target impedance 50 Ω
Matching performance
Matching response time ＜ 2s (＜ 0.8s during load mutation), standing wave ratio (VSWR) ≤ 1.15, maximum reflected power ＜ 2W or 0.5% input power
Impedance matching range
Resistance component 0.3-40 Ω, reactance component -120-40 Ω (covering typical impedance range of plasma process)
Structure and Material
Adopting modular design, including adjustable vacuum capacitors (ceramic dielectric) and high-frequency inductors (made of oxygen free copper); The shell is anodized aluminum alloy with a protection level of IP54
Cooling and power supply
Forced air cooling (wind speed ≥ 2m/s), working temperature 5-55 ℃; Supply voltage 220VAC ± 10%, working current ≤ 1.2A
Control and Interface
Supports dual communication interfaces of RS-485 and Ethernet, and can be connected to device PLC systems; Equipped with impedance detection and fault alarm output ports
Certification and Compatibility
Compliant with CE, UL safety standards and SEMI S2/S8 semiconductor equipment specifications, compatible with AMAT 0190 series RF power supply
AMAT Applied Materials 0041-78374射频匹配组件 产品展示
产品视频
3.其他产品
CCC MCP-1004 交流电电源单元
YOKOGAWA SDV144-S63 数字输入模块
A-B 22A-A2P3N114 交流电驱动器
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The content is from Ruichang Mingsheng Automation Equipment Co., LTD
Contact: +86 15270269218
